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Chinese researchers make breakthrough in ferroelectric materials

作者 Prof. Engr. Zamir Ahmed Awan 2 分钟阅读

新闻台署名 来源:新华社、《黎明报》、《阿拉伯新闻》、阿纳多卢通讯社与《分钟镜报》。由 GSRRA 编辑部翻译并节选。

Chinese researchers make breakthrough in ferroelectric materials
This photo taken on Jan. 21, 2026 shows a sample of ferroelectric thin film in experiment at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China. (Xinhua/Jin Liwang)

BEIJING, Jan. 23 (Xinhua) — Chinese researchers recently made a breakthrough in ferroelectric materials that promises to dramatically increase information storage density.

The research team from the Institute of Physics at the Chinese Academy of Sciences, successfully identified one-dimensional charged domain walls within a fluorite-structured ferroelectric material.

These walls are tiny, with both thickness and width measuring just a few hundred-thousandths of the diameter of a human hair. This discovery, notably, provides a scientific basis for developing next-generation ultra-high-density devices.

Their findings were on Friday published in the journal Science.

Postdoctoral researcher Zhong Hai conducts an experiment on ferroelectric thin film deposition at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China, Jan. 21, 2026. (Xinhua/Jin Liwang)
Postdoctoral researcher Zhong Hai tests ferroelectric performance at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China, Jan. 21, 2026. (Xinhua/Jin Liwang)
This photo taken on Jan. 21, 2026 shows a sample of ferroelectric capacitor waiting to be tested at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China. (Xinhua/Jin Liwang)
Researchers Jin Kuijuan (L) and Ge Chen discuss the experiment plan at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China, Jan. 21, 2026. (Xinhua/Jin Liwang)
This photo taken on Jan. 21, 2026 shows a sample of ferroelectric capacitor at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China. (Xinhua/Jin Liwang)
Researchers Zhang Qinghua, Jin Kuijuan, Zhong Hai and Ge Chen (from left to right), who have successfully identified one-dimensional charged domain walls within a fluorite-structured ferroelectric material, pose for a group photo at a laboratory of the Institute of Physics at the Chinese Academy of Sciences in Beijing, capital of China, Jan. 21, 2026. (Xinhua/Jin Liwang)

Reference Link:- https://english.news.cn/20260123/2baa3ac5ac904834b2d478e34d6bb159/c.html

Prof. Engr. Zamir Ahmed Awan
Prof. Engr. Zamir Ahmed Awan 全球丝绸之路研究联盟创始人兼主席

Zamir Ahmed Awan is the founder and Chair of the Global Silk Route Research Alliance, a think tank in Islamabad. He studied engineering at Shanghai University in the 1980s, and years later he went back to China as Pakistan's science counsellor in Beijing, from 2010 until 2016, working on science and higher education cooperation between the two countries.…

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