{"id":28450,"date":"2026-01-24T06:44:11","date_gmt":"2026-01-24T06:44:11","guid":{"rendered":"https:\/\/gsrra.com\/?p=28450"},"modified":"2026-01-24T06:44:14","modified_gmt":"2026-01-24T06:44:14","slug":"chinese-researchers-make-breakthrough-in-ferroelectric-materials","status":"publish","type":"post","link":"https:\/\/gsrra.com\/?p=28450","title":{"rendered":"Chinese researchers make breakthrough in ferroelectric materials"},"content":{"rendered":"\n
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This photo taken on Jan. 21, 2026 shows a sample of ferroelectric thin film in experiment at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China. (Xinhua\/Jin Liwang)<\/figcaption><\/figure>\n\n\n\n

BEIJING, Jan. 23 (Xinhua) — Chinese researchers recently made a breakthrough in ferroelectric materials that promises to dramatically increase information storage density.<\/p>\n\n\n\n

The research team from the Institute of Physics at the Chinese Academy of Sciences, successfully identified one-dimensional charged domain walls within a fluorite-structured ferroelectric material.<\/p>\n\n\n\n

These walls are tiny, with both thickness and width measuring just a few hundred-thousandths of the diameter of a human hair. This discovery, notably, provides a scientific basis for developing next-generation ultra-high-density devices.<\/p>\n\n\n\n

Their findings were on Friday published in the journal Science. <\/p>\n\n\n\n

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Postdoctoral researcher Zhong Hai conducts an experiment on ferroelectric thin film deposition at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China, Jan. 21, 2026. (Xinhua\/Jin Liwang)<\/figcaption><\/figure>\n\n\n\n
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Postdoctoral researcher Zhong Hai tests ferroelectric performance at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China, Jan. 21, 2026. (Xinhua\/Jin Liwang)<\/figcaption><\/figure>\n\n\n\n
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This photo taken on Jan. 21, 2026 shows a sample of ferroelectric capacitor waiting to be tested at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China. (Xinhua\/Jin Liwang)<\/figcaption><\/figure>\n\n\n\n
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Researchers Jin Kuijuan (L) and Ge Chen discuss the experiment plan at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China, Jan. 21, 2026. (Xinhua\/Jin Liwang)<\/figcaption><\/figure>\n\n\n\n
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This photo taken on Jan. 21, 2026 shows a sample of ferroelectric capacitor at a laboratory of the Institute of Physics at the Chinese Academy of Sciences, in Beijing, capital of China. (Xinhua\/Jin Liwang)<\/figcaption><\/figure>\n\n\n\n
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Researchers Zhang Qinghua, Jin Kuijuan, Zhong Hai and Ge Chen (from left to right), who have successfully identified one-dimensional charged domain walls within a fluorite-structured ferroelectric material, pose for a group photo at a laboratory of the Institute of Physics at the Chinese Academy of Sciences in Beijing, capital of China, Jan. 21, 2026. (Xinhua\/Jin Liwang)<\/figcaption><\/figure>\n\n\n\n

Reference Link:- https:\/\/english.news.cn\/20260123\/2baa3ac5ac904834b2d478e34d6bb159\/c.html<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

BEIJING, Jan. 23 (Xinhua) — Chinese researchers recently made a breakthrough in ferroelectric materials that promises to dramatically increase information storage density. The research team from the Institute of Physics at the Chinese Academy of Sciences, successfully identified one-dimensional charged domain walls within a fluorite-structured ferroelectric material. These walls are tiny, with both thickness and […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"aside","meta":{"footnotes":"","jetpack_publicize_message":"","jetpack_publicize_feature_enabled":true,"jetpack_social_post_already_shared":true,"jetpack_social_options":{"image_generator_settings":{"template":"highway","default_image_id":0,"font":"","enabled":false},"version":2}},"categories":[2],"tags":[9989,26430,2307,26429,12733,13344,26047,24665],"class_list":["post-28450","post","type-post","status-publish","format-aside","hentry","category-sample-category","tag-advance-material","tag-breakthrough-2","tag-china-3","tag-ferroelectric-material","tag-high-tech-4","tag-innovation-3","tag-researchers","tag-sci-tech-4","post_format-post-format-aside"],"jetpack_publicize_connections":[],"_links":{"self":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts\/28450","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=28450"}],"version-history":[{"count":1,"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts\/28450\/revisions"}],"predecessor-version":[{"id":28451,"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts\/28450\/revisions\/28451"}],"wp:attachment":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=28450"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=28450"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=28450"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}