{"id":28162,"date":"2026-01-15T16:48:55","date_gmt":"2026-01-15T16:48:55","guid":{"rendered":"https:\/\/gsrra.com\/?p=28162"},"modified":"2026-01-15T16:49:27","modified_gmt":"2026-01-15T16:49:27","slug":"intl-research-team-develops-damage-free-etching-technique-for-optoelectronic-semiconductors","status":"publish","type":"post","link":"https:\/\/gsrra.com\/?p=28162","title":{"rendered":"Int&#8217;l research team develops damage-free etching technique for optoelectronic semiconductors"},"content":{"rendered":"\n<figure class=\"wp-block-image\"><img decoding=\"async\" src=\"https:\/\/english.news.cn\/20260115\/43c9c8a6fe4c47a48d78ece8240d02df\/bb60fb1235594c0cb0ef31284de0d6af.jpg\" alt=\"\"\/><\/figure>\n\n\n\n<p>Zhang Shuchen (1st L), a member of an international research team, is pictured at a lab at the University of Science and Technology of China in Hefei, east China&#8217;s Anhui Province, Jan. 14, 2026. (University of Science and Technology of China\/Handout via Xinhua)<\/p>\n\n\n\n<p>An international research team has developed a &#8220;self-etching&#8221; technique to process soft and unstable ionic crystal lattice semiconductors, specifically 2D perovskite thin-layer single crystals, without damaging their structure, thereby overcoming a key challenge in the field of optoelectronic materials.<\/p>\n\n\n\n<p>The study, led by researchers from the University of Science and Technology of China, Purdue University, and ShanghaiTech University, was published on Thursday in the journal Nature.<\/p>\n\n\n\n<p>The team introduced a guided &#8220;self-etching&#8221; approach that leverages internal stress accumulated during crystal growth. By using a mild ligand-isopropyl alcohol (IPA) solution system, the researchers induced controlled in-plane self-etching at specific sites in 2D perovskite single crystals.<\/p>\n\n\n\n<p>Subsequently, they precisely filled the etched cavities with 2D perovskites of varying halogen compositions. This enabled the creation of high-quality heterojunctions within a single crystal wafer, characterized by lattice continuity and atomically smooth interfaces.<\/p>\n\n\n\n<p>In semiconductor optoelectronics, heterojunctions &#8212; interfaces formed between materials of different chemical compositions at the atomic level &#8212; allow precise control over the optical properties of each cavity. By tuning the halogens in these etched regions, researchers can design pixel-like units with adjustable emission color and brightness, a crucial step toward miniaturized and efficient optoelectronic devices.<\/p>\n\n\n\n<p>Compared to conventional methods such as strong solvent treatment or ultraviolet patterning, this new strategy is gentler and preserves the crystal lattice from damage.<\/p>\n\n\n\n<p>&#8220;This processing method suggests that in the future, we may integrate densely arranged microscopic light-emitting pixels of different colors on an ultra-thin material. It opens up a new material platform and design pathway for high-performance luminescent and display devices,&#8221; said Zhang Shuchen, a member of the research team.<\/p>\n\n\n\n<p>Reference Link:- <a href=\"https:\/\/english.news.cn\/20260115\/43c9c8a6fe4c47a48d78ece8240d02df\/c.html\" target=\"_blank\" rel=\"noopener\">https:\/\/english.news.cn\/20260115\/43c9c8a6fe4c47a48d78ece8240d02df\/c.html<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Zhang Shuchen (1st L), a member of an international research team, is pictured at a lab at the University of Science and Technology of China in Hefei, east China&#8217;s Anhui Province, Jan. 14, 2026. (University of Science and Technology of China\/Handout via Xinhua) An international research team has developed a &#8220;self-etching&#8221; technique to process soft [&hellip;]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"aside","meta":{"footnotes":"","jetpack_publicize_message":"","jetpack_publicize_feature_enabled":true,"jetpack_social_post_already_shared":true,"jetpack_social_options":{"image_generator_settings":{"template":"highway","default_image_id":0,"font":"","enabled":false},"version":2}},"categories":[2],"tags":[2307,12733,13344,26274,24919,26273],"class_list":["post-28162","post","type-post","status-publish","format-aside","hentry","category-sample-category","tag-china-3","tag-high-tech-4","tag-innovation-3","tag-optoelectronics","tag-resaerch","tag-semiconductor-2","post_format-post-format-aside"],"jetpack_publicize_connections":[],"_links":{"self":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts\/28162","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=28162"}],"version-history":[{"count":1,"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts\/28162\/revisions"}],"predecessor-version":[{"id":28163,"href":"https:\/\/gsrra.com\/index.php?rest_route=\/wp\/v2\/posts\/28162\/revisions\/28163"}],"wp:attachment":[{"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=28162"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=28162"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/gsrra.com\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=28162"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}